ArticleAdvanced materials (Deerfield Beach, Fla.)2026
Stable P-Type PbS Quantum Dot Ink for all-Blade-Coated Short-Wavelength Infrared Photodiodes.
Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
3 citing papers in PubMed.
- Advances in Se Wide-Bandgap Photovoltaics and TeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Direct synthesis of p-type PbS quantum dot inks toward wafer-scale SWIR imaging.National science review · 2026Article
- Surface Passivation of HgTe Nanocrystals Enabling EAdvanced materials (Deerfield Beach, Fla.) · 2026Article
Corrections and comments
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Authors and funding
6 authors.
Funding
Abstract
PbS colloidal quantum dots (CQDs) hold strong promise for short-wave infrared (SWIR) optoelectronics. However, current photodetectors rely on p-type CQD layers fabricated via a laborious, defect-prone layer-by-layer process. While robust n-type CQD inks have been realized, p-type inks remain challenging due to the absence of suitable ligands and solvents. An ideal solvent must ensure colloidal stability and be orthogonal to underlying layers. Here, we report a thiolate-capped p-type PbS CQD ink using mercapto-2-propanol as the ligand and hexafluoro-2-propanol as the solvent. Stabilization arises from ligand-solvent hydrogen bonding, providing a shelf-life exceeding six days. The solvent does not compromise pre-deposited layers, enabling fully blade-coated photodiodes in both n-p and p-n architectures. Devices fabricated with this ink exhibit a twofold increase in specific detectivity (2.55 × 10
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