Evidence map›Paper›PMID 41633968›Full record

ArticleLight, science & applications2026

Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics.

Zixu Sa, Kepeng Song, You Meng, Wenfeng Wu, Zhaocong Wang, Pengsheng Li, Jie Zhang, Zeqi Zang, Guangcan Wang, Mingxu Wang and 7 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Light, science & applications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Zixu Sa *School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Kepeng Song *School of Chemistry and Chemical Engineering, Shandong University, Jinan, China.
You Meng *Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China.
Wenfeng Wu *School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Zhaocong WangSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Pengsheng LiSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Jie ZhangSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Zeqi ZangSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Guangcan WangSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.ORCID http://orcid.org/0000-0002-4661-699X
Mingxu WangSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Zhitai JiaSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Yang TanSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Weifeng LiSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China. lwf@sdu.edu.cn.
SenPo YipInstitute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, Japan.ORCID http://orcid.org/0000-0002-6622-3982
Feng ChenSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China. drfchen@sdu.edu.cn.ORCID http://orcid.org/0000-0002-9277-9810
Johnny C HoDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China. johnnyho@cityu.edu.hk.ORCID http://orcid.org/0000-0003-3000-8794
Zai-Xing YangSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China. zaixyang@sdu.edu.cn.ORCID http://orcid.org/0000-0002-9040-8805

Funding

Research Grants Council, University Grants Committee (RGC, UGC) CityU RFS2021-1S04
6 · The paper itself

Abstract

Current crystalline thin-film production techniques typically require specific growth substrates, posing significant challenges for their use in flexible electronics and integrated optoelectronics. In response to these challenges, we introduce a novel method called 'induced fit growth', inspired by the induced fit theory in molecular biology. This method overcomes the limitations of current techniques by enabling the deposition of Ga-based semiconductor films, including GaSb, GaSe, GaAs, and GaAsSb, with controllable thickness and morphology on arbitrary substrates. Utilizing a low-cost, wafer-scale vapor deposition process compatible with standard semiconductor procedures, these Ga-based films can be patterned for various functional applications. For example, the patterned Ga-based thin films exhibit broad applicability in p-channel transistor arrays (with hole mobility of 0.25 cm

Identifiers

PMID41633968
PMCPMC12867999

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