Evidence map›Paper›PMID 41629281›Full record

ArticleLight, science & applications2026

Polarization-sensitive neuromorphic vision sensing enabled by pristine black arsenic-phosphorus.

Shi Zhang, Shuguang Zhu, Shijian Tian, Libo Zhang, Cheng Chen, Kening Xiao, Wenqi Mo, Shicong Hou, Yunduo Zhang, Yuanfeng Wen and 11 more

Abstract read
In one paragraph

Article in Light, science & applications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

21 authors.

Shi Zhang *College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Shuguang Zhu *College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Shijian Tian *College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Libo ZhangCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China. zhanglibo@ucas.ac.cn.ORCID http://orcid.org/0000-0001-6840-8780
Cheng ChenKey Laboratory of Semiconductor Display Materials and Chips & i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China.
Kening XiaoCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Wenqi MoCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Shicong HouCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Yunduo ZhangCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Yuanfeng WenCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Yiran TanCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Kaixuan ZhangCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Jiayue HanSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.ORCID http://orcid.org/0000-0001-6154-9206
Changlong LiuCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.ORCID http://orcid.org/0000-0001-8516-2436
Jiale HeCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Weiwei TangCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Jun WangSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.ORCID http://orcid.org/0000-0003-2370-2964
Guanhai LiCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China. ghli0120@mail.sitp.ac.cn.ORCID http://orcid.org/0000-0002-2745-055X
Kai ZhangKey Laboratory of Semiconductor Display Materials and Chips & i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China.ORCID http://orcid.org/0000-0001-9378-0947
Lin WangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China. wanglin@mail.sitp.ac.cn.ORCID http://orcid.org/0000-0001-6177-5289
Xiaoshuang ChenCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China. xschen@mail.sitp.ac.cn.ORCID http://orcid.org/0000-0003-0131-9454

Funding

National Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund (NSFC-Yunnan Joint Fund) 62204068National Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund (NSFC-Yunnan Joint Fund) 62305077
6 · The paper itself

Abstract

Polarization-sensitive neuromorphic vision sensing excels in distinguishing light polarization states, offering intrinsic advantages in reducing glare and enhancing visual clarity in complex lighting environments, enabling advanced applications in autonomous driving, optical communication, and bioinspired imaging across the visible-to-infrared spectrum. Here, we present a polarization-sensitive neuromorphic phototransistor based on a high-quality, intrinsically anisotropic two-dimensional black arsenic-phosphorus nanosheet, which exhibits exceptional optoelectronic performance with a peak responsivity of 2.88 A W

Identifiers

PMID41629281
PMCPMC12865036

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.