ArticleIEEE sensors letters2026
InAlN/GaN Detectors for Real-Time Dosimetry in Ultra-High Dose Rate FLASH Radiotherapy.
Article in IEEE sensors letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
This letter reports the first characterization of InAlN/GaN-on-Si solid-state detectors under ultra-high dose-per-pulse (UH-DPP) electron irradiation for FLASH radiotherapy applications. Unpassivated Ni/Au metal-semiconductor-metal (MSM) and two-dimensional electron gas (2DEG) interdigital transducer (IDT) detectors exhibited the best transient performance, with the 2DEG IDT resolving individual pulses as short as 3 μs rise and 325 μs fall times and achieving a signal-to-noise ratio (SNR) exceeding 220 under 2 Gy pulses. Across a dose-per-pulse (DPP) range of 0.05-0.5 Gy, the 2DEG IDT detector demonstrated consistent, dose-dependent voltage responses with sensitivities of 0.5-0.9 V/Gy and a normalized sensitivity of 48.75 nC/Gy/mm
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