ArticleACS applied materials & interfaces2026
Wafer-Bonded AlGaInP Red LEDs with Suppressed S-Droop through Surface Sulfidation.
Article in ACS applied materials & interfaces, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
17 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Micro-light-emitting diode (micro-LED) technology enables high pixels-per-inch (PPI) displays using conventional semiconductor processes and relies on extremely miniaturized mesa structures derived from traditional LEDs. Scaling to smaller sizes leads to a significant decrease in emission efficiency because of the stronger influence of sidewall damage. This efficiency degradation, known as the size-effect or S-droop, primarily arises from surface defects introduced by dry etching. These defects promote nonradiative Shockley-Read-Hall (SRH) recombination and create pathways for surface leakage current. In aluminum gallium indium phosphide (AlGaInP) LEDs, chemical passivation with ammonium sulfide is widely used to mitigate sidewall damage. However, the underlying reaction mechanism remains unclear, and most studies address only the sidewall regions. In this work, we fabricated a wafer-bonded vertical AlGaInP LED structure compatible with light-emitting diode on silicon (LEDoS) integration and applied ammonium sulfide surface sulfidation to investigate its broader effects. Chemical changes from sulfidation were examined using energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). These analyses revealed that surface defects were replaced by stable sulfur bridge bonds, leading to Fermi level unpinning. Electrical characterization further separated parallel and series resistances, which revealed the influence of surface sulfidation across both the top and sidewall interfaces. As a result, the maximum external quantum efficiency (EQE) increased by 120.6% at 5 A/cm
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.