ArticleSensors (Basel, Switzerland)2026
A 5000 Fps, 4 Megapixel, Radiation-Tolerant, Wafer-Scale CMOS Image Sensor for the Direct Detection of Electrons and Photons.
Article in Sensors (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
We present the design and characterisation of a 4.2-megapixel, wafer-scale CMOS image sensor, achieving over 5000 frames per second at full resolution. The sensor has a pixel pitch of 58 µm square pixels, thus being as large as a full 200 mm wafer. The sensor is read out on two sides and features column-parallel programmable gain amplifiers (PGAs) as well as analogue-to-digital converters (ADCs). The array has 2052 columns and 2064 rows; 12 rows are read in parallel, so that the total number of ADCs is 24,624. The data is transmitted through 216 sub-LVDS lanes running at 1 Gbps in double data rate (DDR). Besides the row and column control, the sensor generates the necessary voltages and currents on a chip. The programming is performed through a serial-to-parallel interface (SPI). The sensor was optimised for direct detection of electrons, but it can also detect photons. Thus, it could be a good candidate for applications where high speed is needed, such as wavefront sensing.
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