Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.

Chucai Guo, Qingwei Zhou, Biyuan Zheng, Hansheng Li, Fan Wu, Dan Chen, Fang Luo, Zhihong Zhu

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Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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8 authors.

Chucai GuoCollege of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel NanoOptoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.ORCID 0000-0002-8283-306X

Qingwei ZhouCollege of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel NanoOptoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.

Biyuan ZhengCollege of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel NanoOptoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.

Hansheng LiCollege of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel NanoOptoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.ORCID 0000-0001-5065-1838

Fan WuCollege of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel NanoOptoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.ORCID 0000-0003-1249-6317

Dan ChenCollege of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel NanoOptoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.

Fang LuoCollege of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel NanoOptoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.

Zhihong ZhuCollege of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel NanoOptoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.

Funding

National Natural Science Foundation of China 52101257National Natural Science Foundation of China 52505446

6 · The paper itself

Abstract

With the rapid advancement in portable electronics, artificial intelligence, and the Internet of Things, there is an escalating demand for high-density, low-voltage non-volatile memory (NVM) technologies. Germanium (Ge) nanocrystals (NCs) have emerged as a promising candidate for NVM applications; however, traditional synthesis methodologies suffer from limitations in achieving precise control over the size and density of these nanocrystals, which exert a significant influence on device performance. This study presents an innovative Ag-catalyzed chemical vapor deposition (CVD) methodology for the synthesis of Ge NCs with precisely controllable size and density on SiO

Indexed as

catalytic growthchemical vapor depositionGe nanocrystalsnon-volatile memory

Identifiers

PMID41591064

DOI10.3390/nano16020146

PMCPMC12844894

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