ArticleNational science review2026
Hybrid ionic-electronic semiconductors for interface engineering of ultra-low-dark-current solution-processed SWIR photodetectors.
Article in National science review, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- Origin of Dark Current Robustness in Photomultiplication Organic Photodetectors Enabled by Ionic Conjugated Electron-Blocking Layers.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Much improved thin-film photodiodes with novel organic interlayer.National science review · 2026Article
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Authors and funding
10 authors.
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Abstract
Shortwave infrared (SWIR) photodetectors are essential for industrial, medical and security applications, but their adoption is limited by reliance on costly epitaxial semiconductors. Solution-processed organic and colloidal quantum dot (CQD) semiconductors offer a promising alternative, although their devices often suffer from high dark-current under reverse bias. We demonstrate an approach to precise work function modulation in SWIR photodetectors using conjugated polyelectrolytes with mixed counterions. This strategy achieves continuous work function tuning and interfacial defect passivation, significantly reducing dark current in solution-processed photodetectors. The optimized CQD photodetectors exhibit a dark-current density two orders of magnitude lower than that of conventional devices at -0.1 V bias (6.7 × 10
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