Evidence map›Paper›PMID 41582292›Full record

ArticleNano-micro letters2026

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices.

Eun Bee Ko, Junho Sung, Seon Yeon Choi, Yasir Hassan, Jeong-Ju Bae, Jongseok Kim, Hyun You Kim, Eunho Lee, Min Sup Choi, Hyun Ho Kim

Abstract read
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In one paragraph

Article in Nano-micro letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Two-Dimensional Flash Memory: Materials, Interfaces, and Storage-Computing Convergence.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Eun Bee KoSchool of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea.
Junho SungDepartment of Chemical and Biomolecular Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea.
Seon Yeon ChoiSchool of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea.
Yasir HassanDepartment of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea.
Jeong-Ju BaeDepartment of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea.
Jongseok KimDepartment of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea.
Hyun You KimDepartment of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea.
Eunho LeeDepartment of Chemical and Biomolecular Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea.
Min Sup ChoiDepartment of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea. goodcms@cnu.ac.kr.
Hyun Ho KimSchool of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea. kimhh@gist.ac.kr.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The continued scaling of flash memory technologies faces challenges such as limited operation speed, poor data retention, and interface defects inherent to conventional three-dimensional architectures. Two-dimensional (2D) materials, with van der Waals interfaces and atomic-scale thickness, offer a promising pathway to overcome these limitations by enabling efficient charge modulation while minimizing surface defects. In this work, a nonvolatile 2D flash memory device is developed employing monolayer Janus MoSSe as the charge-trapping layer and hexagonal boron nitride (h-BN) as an ultrathin tunneling barrier. The intrinsic structural asymmetry of Janus MoSSe induces a strong vertical dipole moment, resulting in enhanced charge trapping, deeper energy barriers, and directional polarization compared with symmetric 2D materials. Consequently, the devices exhibit outstanding retention times exceeding 10

Indexed as

2D materialsFloating-gateJanus TMDsNonvolatile memorySynaptic device

Identifiers

PMID41582292
PMCPMC12832604

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.