ArticleSmall (Weinheim an der Bergstrasse, Germany)2026
Low Temperature MOCVD Synthesis of High-Mobility 2D InSe.
Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed.
- Two-Dimensional Indium Selenide for Next-Generation Electronics.International journal of molecular sciences · 2026Review
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18 authors.
Funding
Abstract
2D indium selenide (InSe) is a layered semiconductor with high electron mobility and a tunable band gap ranging from 1.25 eV in the bulk to 2.8 eV in the monolayer limit. However, growing phase-pure InSe remains challenging due to the complex indium-selenium (In-Se) phase diagram. This complexity and the sensitivity of chemical precursors to growth conditions make it difficult to control which In-Se phase forms during synthesis during, e.g., metal-organic chemical vapor deposition (MOCVD). MOCVD is considered the most promising approach for growing InSe, as it enables wafer-scale, uniform, and controllable deposition-key requirements for device integration. We present a systematic investigation of InSe synthesis on c-plane sapphire substrates at low temperatures. By varying Se/In precursor ratio and growth temperature, we create a phase diagram that covers In-rich, equal stoichiometric, and Se-rich In
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