Evidence map›Paper›PMID 41565688›Full record

ArticleNature communications2026

Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS

Yoshiki Sakuma, Keisuke Atsumi, Takanobu Hiroto, Jun Nara, Akihiro Ohtake, Yuki Ono, Takashi Matsumoto, Yukihiro Muta, Kai Takeda, Emi Kano and 9 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. MOCVD-Grown MoSAdvanced materials (Deerfield Beach, Fla.) · 2026
    Article
  2. Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

19 authors.

Yoshiki SakumaResearch Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan. sakuma.yoshiki@nims.go.jp.ORCID http://orcid.org/0000-0001-6804-7217
Keisuke AtsumiDepartment of Materials Engineering, The University of Tokyo, Tokyo, Japan.
Takanobu HirotoResearch Network and Facility Services Division, National Institute for Materials Science, Tsukuba, Japan.ORCID http://orcid.org/0000-0002-6176-5782
Jun NaraResearch Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan.
Akihiro OhtakeResearch Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan.ORCID http://orcid.org/0000-0002-3519-4613
Yuki OnoTokyo Electron Technology Solutions Limited, Hosaka-cho, Nirasaki, Japan.
Takashi MatsumotoTokyo Electron Technology Solutions Limited, Hosaka-cho, Nirasaki, Japan.
Yukihiro MutaTokyo Electron Technology Solutions Limited, Hosaka-cho, Nirasaki, Japan.
Kai TakedaTokyo Electron Technology Solutions Limited, Hosaka-cho, Nirasaki, Japan.
Emi KanoInstitute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan.ORCID http://orcid.org/0000-0001-6134-4980
Toshiki YasunoInstitute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan.
Xu YangInstitute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan.
Nobuyuki IkarashiInstitute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan.
Asato SuzukiDepartment of Physics, University of Tsukuba, Tsukuba, Japan.
Michio IkezawaDepartment of Physics, University of Tsukuba, Tsukuba, Japan.
Shuhong LiDepartment of Materials Engineering, The University of Tokyo, Tokyo, Japan.
Tomonori NishimuraDepartment of Materials Engineering, The University of Tokyo, Tokyo, Japan.ORCID http://orcid.org/0000-0002-8000-5164
Kaito KanahashiDepartment of Materials Engineering, The University of Tokyo, Tokyo, Japan.
Kosuke NagashioDepartment of Materials Engineering, The University of Tokyo, Tokyo, Japan. nagashio@material.t.u-tokyo.ac.jp.ORCID http://orcid.org/0000-0003-1181-8644

Funding

MEXT | Japan Society for the Promotion of Science (JSPS) JP17H03241MEXT | Japan Society for the Promotion of Science (JSPS) JP21H05232MEXT | Japan Society for the Promotion of Science (JSPS) JP21H05237MEXT | Japan Society for the Promotion of Science (JSPS) JP22H04957MEXT | Japan Society for the Promotion of Science (JSPS) JP22K04212MEXT | Japan Society for the Promotion of Science (JSPS) JP23K03272MEXT | Japan Society for the Promotion of Science (JSPS) JP23K04592MEXT | Japan Society for the Promotion of Science (JSPS) JP23K13622MEXT | JST | Core Research for Evolutional Science and Technology (CREST) JPMJCR24A3
6 · The paper itself

Abstract

Unidirectional nucleation followed by seamless stitching has emerged as a promising strategy for the scalable epitaxial growth of single-crystalline monolayer transition metal dichalcogenides on sapphire substrates, which holds potential for post-silicon electronics. In contrast, here we present a different growth mechanism for single-crystalline MoS

Identifiers

PMID41565688
PMCPMC12824160

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.