Evidence map›Paper›PMID 41559047›Full record

ArticleNature communications2026

Intrinsically stretchable 2D MoS

Kyunghun Kim, Yasutaka Kuzumoto, Changhoon Jung, Seongmin Heo, Taoyu Zou, Gwon Byeon, Hyunbum Kang, Hyungjun Kim, Younhee Lim, Jisoo Shin and 8 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Kyunghun KimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Yasutaka KuzumotoSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Changhoon JungSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.ORCID http://orcid.org/0000-0001-6102-2658
Seongmin HeoDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea.
Taoyu ZouDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea.ORCID http://orcid.org/0000-0003-4477-051X
Gwon ByeonDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea.
Hyunbum KangSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Hyungjun KimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Younhee LimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Jisoo ShinSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Seon-Jeong LimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.ORCID http://orcid.org/0000-0003-0877-5372
Joo-Young KimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Ji Young JungSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Sung-Gyu KangSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Bang-Lin LeeSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.
Yong-Young NohDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea. yynoh@postech.ac.kr.ORCID http://orcid.org/0000-0001-7222-2401
Gae Hwang LeeSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea. gaehwang.lee@samsung.com.ORCID http://orcid.org/0000-0002-4521-8957
Tae-Gon KimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Intrinsically stretchable electronics is rapidly emerging as a transformative platform for next-generation electronics, offering novel form factors and enhanced capabilities. Herein, we report high-performance intrinsically stretchable thin-film transistors based on two-dimensional semiconducting flakes. Our n-type molybdenum disulfide transistors exhibit a maximum field-effect mobility up to 12.5 cm

Identifiers

PMID41559047
PMCPMC12917160

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.