A Lithium Fluoride Interfacial Layer for Low-Voltage and Reliable Perovskite Memristors.

Naresh Kumar Pendyala, Ignacio Sanjuán, Qun-Gao Chen, Wen-Ya Lee, Chu-Chen Chueh, Antonio Guerrero

Abstract read

In one paragraph

Article in ACS applied electronic materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Naresh Kumar PendyalaInstitute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain.ORCID https://orcid.org/0000-0001-6993-1610

Ignacio SanjuánInstitute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain.

Qun-Gao ChenDepartment of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 106344, Taiwan.ORCID https://orcid.org/0000-0003-2475-8230

Wen-Ya LeeDepartment of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 106344, Taiwan.ORCID https://orcid.org/0000-0003-4562-4813

Chu-Chen ChuehDepartment of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan.ORCID https://orcid.org/0000-0003-1203-4227

Antonio GuerreroInstitute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain.ORCID https://orcid.org/0000-0001-8602-1248

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Halide-perovskite materials have emerged as promising candidates for constructing reliable memristors, a key element for advancing neuromorphic computing systems. While several perovskite formulations have been tested, the nature of the external interfaces has not been exploited to its full potential. In this study, LiF is employed as an interfacial layer between a bromide-perovskite and the top contact. The interlayer acts as a source of Li

Indexed as

buffer-layercycling stabilityhalide perovskitelithium fluoridelow-voltagememristor

Identifiers

PMID41552693

DOI10.1021/acsaelm.5c02347

PMCPMC12805799

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.