Evidence map›Paper›PMID 41550815›Full record

ArticleRSC advances2026

Electronic and magnetic properties of defective and Fe-doped InS monolayers adjusted by hole doping as a second functionalization step: a first-principles study.

Nguyen Thanh Tien, Nguyen Thanh Son, Truong Tuan Vu, R Ponce-Pérez, J Guerrero-Sanchez, D M Hoat

Abstract read
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In one paragraph

Article in RSC advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Nguyen Thanh TienCollege of Natural Sciences, Can Tho University 3-2 Road, Can Tho City 900000 Vietnam.ORCID https://orcid.org/0000-0002-6678-3787
Nguyen Thanh SonCenter of Scientific Research and Application, Lac Hong University No. 10 Huynh Van Nghe Str Tran Bien Ward Dong Nai Province Vietnam.
Truong Tuan VuCollege of Natural Sciences, Can Tho University 3-2 Road, Can Tho City 900000 Vietnam.
R Ponce-PérezUniversidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico.
J Guerrero-SanchezUniversidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico.
D M HoatInstitute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam dominhhoat@duytan.edu.vn.ORCID https://orcid.org/0000-0003-4835-4505

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this work, hole doping is proposed as a second functionalization step to modify the electronic and magnetic properties of defective and Fe-doped InS monolayers. The pristine monolayer is confirmed to be a two-dimensional (2D) material with an indirect gap of 1.65 eV, whose In-S chemical bonds exhibit both covalent and ionic characters. The creation of a single In vacancy (1Va

Identifiers

PMID41550815
PMCPMC12809667

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.