Evidence map›Paper›PMID 41547866›Full record

ArticleNature communications2026

Exciton-polariton photodiodes.

Qixiao Zhao, Adam D Alfieri, Mengjia Xia, Anping Ge, Haonan Ge, Liaoxin Sun, Runzhang Xie, Fang Wang, Deep Jariwala, Jinshui Miao and 1 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Multiscale Design and Simulation of CdSe/ZnS/MoTeSensors (Basel, Switzerland) · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Qixiao ZhaoState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0001-6215-9832
Adam D AlfieriDepartment of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
Mengjia XiaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
Anping GeState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
Haonan GeState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
Liaoxin SunState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0003-4769-3388
Runzhang XieState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0003-2389-9816
Fang WangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0002-3044-0571
Deep JariwalaDepartment of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA. dmj@seas.upenn.edu.ORCID http://orcid.org/0000-0002-3570-8768
Jinshui MiaoState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China. jsmiao@mail.sitp.ac.cn.ORCID http://orcid.org/0000-0002-3041-1105
Weida HuState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China. wdhu@mail.sitp.ac.cn.ORCID http://orcid.org/0000-0001-5278-8969

Funding

Chinese Academy of Sciences (CAS) XDB0580000National Natural Science Foundation of China (National Science Foundation of China) T2521003, 62334011, 62261136552, 62005303, 62134001 and 51925208
6 · The paper itself

Abstract

Photodiodes are central to high-speed communication, sensing and light-harvesting devices. While silicon and other inorganic semiconductor-based photodiodes have been widely integrated into commercial technologies, photodiodes from excitonic semiconductors continue to maintain high interest in research. Excitonic semiconductors are superior in terms of absorption as compared to silicon and III-V semiconductors, but have always suffered from poor charge transport and narrow band absorption due to the short diffusion lengths and resonant nature of the excitons, respectively. Here, we attempt to solve both these central issues in excitonic photodiode devices via use of polariton physics and demonstrating photodiodes in the strong light-matter coupling regime. By using a conductive tin-doped indium oxide transparent top electrode that also serves as an anti-reflective coating combined with self-trapping and hybridization of light in inorganic excitonic semiconductor WS

Identifiers

PMID41547866
PMCPMC12905320

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.