ArticleNature materials2026
Large-area non-stoichiometric phase transition in transition metal chalcogenide films.
Abstract read
In one paragraph
Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
1 citing paper in PubMed.
- Superconducting PdTe Thin Film via Topotactic Transformation, toward Topological Superconductors.ACS applied nano materials · 2026Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
30 authors.
Zhongqiang Chen *State Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
Jin-An Shi *School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
Jianqi Huang *Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.ORCID http://orcid.org/0009-0008-2026-7323
Yuan Chang *MOE Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian, China.
Ruijie XuState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
Kankan XuState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
Xu ZhangState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
Xudong LiuState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0003-0500-154X
Da TianResearch Institute of Superconductor Electronics, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, School of Electronic Science and Engineering, Nanjing University, Nanjing, China.ORCID http://orcid.org/0009-0000-2414-4816
Yong ZhangState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.ORCID http://orcid.org/0009-0002-2709-8194
Sajjad AliShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.ORCID http://orcid.org/0000-0002-0134-5217
Xingze DaiState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
Gan LiuNational Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.
Zheng DaiNational Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.
Shuai ZhangNational Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0002-2916-3394
Fucong FeiNational Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0003-2828-022X
Xiaoxiang XiNational Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0002-8685-9267
Yufeng HaoNational Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0001-7758-5244
Liang HeState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0002-5279-0097
Wu ZhouSchool of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China. wuzhou@ucas.ac.cn.ORCID http://orcid.org/0000-0002-6803-1095
Teng YangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China. yangteng@imr.ac.cn.ORCID http://orcid.org/0000-0003-3773-7586
Junfeng GaoMOE Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian, China. gaojf@dlut.edu.cn.ORCID http://orcid.org/0000-0001-5732-9905
Feng DingSuzhou Laboratory, Suzhou, China.ORCID http://orcid.org/0000-0001-9153-9279
Yongbing XuState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0002-7823-0725
Fengqi SongNational Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0001-6266-6551
Biaobing JinResearch Institute of Superconductor Electronics, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, School of Electronic Science and Engineering, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0001-9506-8355
Xinran WangState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0002-3975-1667
Yi ShiState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0002-1082-0315
Rong ZhangState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. rzhang@nju.edu.cn.ORCID http://orcid.org/0000-0003-0015-6331
Xuefeng WangState Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. xfwang@nju.edu.cn.ORCID http://orcid.org/0000-0002-3472-7895
Funding
National Natural Science Foundation of China (National Science Foundation of China) 52031014National Natural Science Foundation of China (National Science Foundation of China) 62525406, T2394473, 624B2070, 62274085National Natural Science Foundation of China (National Science Foundation of China) 92161201, 12025404, T2221003Natural Science Foundation of Jiangsu Province (Jiangsu Provincial Natural Science Foundation) BK20243014
Abstract
Phase engineering is of vital importance for determining the material functionalities and expanding the material library. However, the controllable and scalable phase transition of transition metal chalcogenides remains extremely challenging. The microscopic observation of the phase evolution pathway is an essential prerequisite for understanding the phase transition mechanism. Here we atomically observe a non-stoichiometric phase evolution process in large-scale superconducting PdTe
Identifiers
PMID
41545650What OpenQuestion holds
Textmetadata
Read underepoch 390
Registered trials
None linked
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.