ArticleRSC advances2026
Fabrication and characterization of efficient visible-NIR CdS/porous Si/p-Si photodetectors
Article in RSC advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
1 citing paper in PubMed.
- Laser-assisted p-PANI/n-CdS/p-Si dual-heterojunction architecture for UV/Vis/NIR wavelength detection.Nanoscale advances · 2026Article
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Authors and funding
3 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The progress in preparation techniques of semiconducting thin film is a fundamental aspect of present-day electronics, addressing the increasing need for high-efficiency and cost-effective optoelectronic devices. The CdS-porous silicon (PSi) heterostructure has drawn significant attention for advanced technological and industrial applications, such as solar cells and photodetectors. Nevertheless, conventional chemical bath deposition (CBD) commonly produces CdS films with limited crystallinity, high defect density, and non-uniform morphology, which reduce device performance. Therefore, developing a simple, cost-effective technique to improve the structural quality of CdS without modifying the chemical route is highly desirable. This study presents a method that uses green diode laser illumination to improve the quality of the CdS films prepared by the CBD process. X-ray diffraction XRD investigations of the CdS film prepared with laser illumination reveal improved crystallinity compared with the as-deposited CdS film. Optical absorption measurements show that the optical energy gap of the CdS film increases from 2.38 eV to 2.61 eV when laser illumination is employed during film deposition. Scanning electron microscopy (SEM) studies confirm a reduction in the agglomeration of CdS particles when subjected to laser illumination, with the CdS particles being effectively incorporated inside the pores of PSi. The CdS-embedded PSi photodetector shows an increase in responsivity from 1.9 to 4.5 A W
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Registered trials
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