ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Semiconducting THO-C
Rui Tan, Xueqing Chen, Jifeng Luo, Zhe Xue, Zehou Li, Xiaolin Wei, Zhenkun Tang, Gaokuo Zhong
Abstract read
In one paragraphArticle in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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4 · The recordCorrections and comments
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5 · Who and what moneyAuthors and funding
8 authors.
Rui TanThe Key Laboratory of Micro-nano Energy Materials and Application Technologiescollege of Physics and Electronic Engineering, University of Hunan Province, Hengyang Normal University, Hengyang, P. R. China.
Xueqing ChenThe Key Laboratory of Micro-nano Energy Materials and Application Technologiescollege of Physics and Electronic Engineering, University of Hunan Province, Hengyang Normal University, Hengyang, P. R. China.
Jifeng LuoChangsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, P. R. China.
Zhe XueSchool of Materials Science and Engineering, Collaborative Innovation Center of Ministry of Education and Shanxi Province For High-performance Al/Mg Alloy Materials, North University of China, Taiyuan, P. R. China.
Zehou LiThe Key Laboratory of Micro-nano Energy Materials and Application Technologiescollege of Physics and Electronic Engineering, University of Hunan Province, Hengyang Normal University, Hengyang, P. R. China.
Xiaolin WeiThe Key Laboratory of Micro-nano Energy Materials and Application Technologiescollege of Physics and Electronic Engineering, University of Hunan Province, Hengyang Normal University, Hengyang, P. R. China.
Zhenkun TangThe Key Laboratory of Micro-nano Energy Materials and Application Technologiescollege of Physics and Electronic Engineering, University of Hunan Province, Hengyang Normal University, Hengyang, P. R. China.
Gaokuo ZhongChangsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, P. R. China.ORCID https://orcid.org/0000-0003-4238-2759 Funding
National Natural Science Foundation of China 52372144National Natural Science Foundation of China 52533010National Natural Science Foundation of China 62474186Science and Technology Innovation Program of Hunan Province 2025RC3107Scientific Research Fund of Hunan Provincial Education Department 24B0658
6 · The paper itselfAbstract
Biphenylene-based structures with semiconducting characteristics hold great promise for nanoelectronics owing to their intrinsically anisotropic charge transport. Yet, achieving semiconducting behavior in these systems remains challenging due to their inherent metallic nature. Here, we propose a precise site-specific N-doping strategy that drives a secondary electronic transition in net W, enabling the electronic properties transition from metal to Dirac semimetal and ultimately to semiconductor. This transition is governed by the synergistic interplay of structural distortion, band-filling, on-site energy differences, and symmetry. The optimized THO-C
Indexed as
2D carbon nitridesbiphenylene‐based structurescarrier mobilitydoping engineering
Identifiers
PMID41538659
PMCPMC13042467
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