Evidence map›Paper›PMID 41537462›Full record

ArticleNano letters2026

Low-Density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes.

Saimon F Covre Da Silva, Ailton J Garcia, Maximilian Aigner, Christian Weidinger, Tobias M Krieger, Gabriel Undeutsch, Christoph Deneke, Ishrat Bashir, Santanu Manna, Melina Peter and 3 more

Abstract read
In one paragraph

Article in Nano letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Saimon F Covre Da SilvaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0003-4977-1933
Ailton J GarciaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0002-1364-2622
Maximilian AignerInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0002-2113-3457
Christian WeidingerInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0009-0006-7540-209X
Tobias M KriegerInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0003-1245-9866
Gabriel UndeutschInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0001-5080-7695
Christoph DenekeInstituto de Física Gleb Wataghin, Universidade Estadual de Campinas (UNICAMP), 13083-859 Campinas, Brazil.ORCID 0000-0002-8556-386X
Ishrat BashirDepartment of Electrical Engineering, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, Delhi 110016, India.ORCID 0009-0001-5003-8459
Santanu MannaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0002-0946-2629
Melina PeterInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0003-2821-904X
Ievgen BrytavskyiInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0003-4177-9818
Johannes AberlInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.
Armando RastelliInstitute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.ORCID 0000-0002-1343-4962

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has allowed the growth of almost strain-free QDs, with low and controllable surface densities, small excitonic fine structure splitting (FSS), and fast radiative decays. Here, we extend the technique to In(Ga)As QDs in AlGaAs, thereby increasing the achievable emission wavelength range beyond that accessible to GaAs/AlGaAs QDs while preserving some of the key advantages of this growth method. We observe QD densities of ∼0.25 μm

Indexed as

local droplet etchingmolecular beam epitaxysemiconductor quantum dotssingle photon sources

Identifiers

PMID41537462
PMCPMC12856885

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.