Dipolar modulation of surface states in GaN via molecular ionization energy.

Or Haim Chaulker, Yury Turkulets, Yoram Shapira, R S Goldman, Ilan Shalish

Abstract read

In one paragraph

Article in Scientific reports, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Or Haim ChaulkerSchool of Electrical and Computer Engineering, Ben Gurion University of the Negev, 8410501, Beer Sheva, Israel.

Yury TurkuletsDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA.

Yoram ShapiraSchool of Electrical Engineering, Tel Aviv University, 6997801, Tel Aviv, Israel.

R S GoldmanDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA.

Ilan ShalishSchool of Electrical and Computer Engineering, Ben Gurion University of the Negev, 8410501, Beer Sheva, Israel. shalish@bgu.ac.il.

Funding

National Science Foundation ECCS- 2240388Office of Naval Research Global N62909-26-1-2000United States - Israel Binational Science Foundation 2022627

6 · The paper itself

Abstract

Gallium nitride (GaN) surface states play a pivotal role in determining device performance and stability. Here, we show that adsorption of molecules with varying ionization energies modulates GaN surface states, as revealed by surface photovoltage and X-ray photoelectron spectroscopy. We find a linear relationship between adsorbate ionization energy and surface Fermi level, indicating that the Ga-polar surface is not intrinsically pinned but is tunable via charge transfer at the native oxide interface. Removal of this oxide suppresses molecular effects, confirming the active state at the GaN/native oxide interface. The low work function values of adsorbed layers suggest robust, ambient-stable dipolar structures, offering a possible new route for negative electron affinity (NEA) activation. Our findings provide a framework for targeted GaN surface engineering in electronic devices.

Identifiers

PMID41535717

DOI10.1038/s41598-026-35475-9

PMCPMC12881440

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LicenceCC BY-NC-ND

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.