Evidence map›Paper›PMID 41535330›Full record

ArticleNature materials2026

Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS

Saifei Gou, Yuxuan Zhu, Zhejia Zhang, Menglin Huang, Jinshu Zhang, Xiangqi Dong, Mingrui Ao, Qicheng Sun, Zhenggang Cai, Yan Hu and 23 more

Abstract read
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In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

33 authors.

Saifei Gou *State Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Yuxuan Zhu *State Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Zhejia Zhang *State Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Menglin Huang *State Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.ORCID http://orcid.org/0000-0002-0783-103X
Jinshu Zhang *State Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Xiangqi DongState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Mingrui AoState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Qicheng SunState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Zhenggang CaiState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Yan HuState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Yufei SongState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Jiahao WangState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Haojie ChenState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Yuchen TianState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Xinliu HeState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Jieya ShangState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Zhengjie SunState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Qihao ChenState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Yang LiuState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Zihan XuShenzhen Six Carbon Technology, Shenzhen, People's Republic of China.ORCID http://orcid.org/0000-0002-5632-0439
Xiaofei YueSchool of Information Science and Technology, Fudan University, Shanghai, People's Republic of China.
Chunxiao CongSchool of Information Science and Technology, Fudan University, Shanghai, People's Republic of China.ORCID http://orcid.org/0000-0001-9786-825X
Yin WangShaoxin Laboratory, Shaoxing, People's Republic of China.
Liwei LiuFrontier Institute of Chip and System, Fudan University, Shanghai, People's Republic of China.ORCID http://orcid.org/0009-0003-3163-5586
Xiaojun TanShaoxin Laboratory, Shaoxing, People's Republic of China.
Mengjiao LiSchool of Microelectronics, Shanghai University, Jiading, Shanghai, People's Republic of China.ORCID http://orcid.org/0000-0003-4801-560X
Chen YangChangxin Memory Technologies, Hefei, People's Republic of China.
Hao MengChangxin Memory Technologies, Hefei, People's Republic of China.
Mingyuan LiuChangxin Memory Technologies, Hefei, People's Republic of China.
Huihui LiChangxin Memory Technologies, Hefei, People's Republic of China.ORCID http://orcid.org/0000-0001-8318-384X
Shiyou ChenState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China. chensy@fudan.edu.cn.ORCID http://orcid.org/0000-0002-4039-8549
Peng ZhouState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China. pengzhou@fudan.edu.cn.ORCID http://orcid.org/0000-0002-7301-1013
Wenzhong BaoState Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China. baowz@fudan.edu.cn.ORCID http://orcid.org/0000-0002-3871-467X

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12334005National Natural Science Foundation of China (National Science Foundation of China) 62374037Science and Technology Commission of Shanghai Municipality (Shanghai Municipal Science and Technology Commission) 23JC1401100
6 · The paper itself

Abstract

Two-dimensional semiconductors are emerging as crucial materials for the post-Moore era. However, the transition to industrial-scale applications is hindered by engineering challenges, including the contact engineering. Among different strategies, edge contact offers advantages of ultimate contact scaling and the elimination of Fermi level pinning, but struggles with co-optimization between on-state current, threshold voltage and off-state leakage current. Here we address these challenges by utilizing an in situ multistep process, in which etching, soft plasma treatment and metal deposition are performed sequentially within the same custom-designed high-vacuum chamber to minimize interface defects. This approach enables molybdenum disulfide (MoS

Identifiers

PMID41535330

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.