Evidence map›Paper›PMID 41524205›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Highly Sensitive Heterojunction-Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm.

Hongkun Duan, Wenyu Zhang, Tao Luo, XiaoLu Xia, Qianxi Yang, Ying Yan, Shengmei Gao, Xitian Yin, Yixiao Niu, Zhiyu Zhao and 5 more

Abstract read
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In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Hongkun DuanSchool of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, China.
Wenyu ZhangSchool of Integrated Circuits, Huazhong University of Science and Technology, Hubei, China.
Tao LuoKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
XiaoLu XiaKey Laboratory of Luminescence & Optical Information, School of Physical Science and Engineering, Ministry of Education, Beijing Jiaotong University, Beijing, China.
Qianxi YangKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
Ying YanSchool of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, China.
Shengmei GaoKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
Xitian YinKey Laboratory of Luminescence & Optical Information, School of Physical Science and Engineering, Ministry of Education, Beijing Jiaotong University, Beijing, China.
Yixiao NiuSchool of Integrated Circuits, Huazhong University of Science and Technology, Hubei, China.
Zhiyu ZhaoSchool of Integrated Circuits, Huazhong University of Science and Technology, Hubei, China.
Jianbing ZhangSchool of Integrated Circuits, Huazhong University of Science and Technology, Hubei, China.
Haobin HeChongqing Institute of Carbon-Based Integrated Circuits Peking University, Chongqing, China.
Jiang TangWuhan National Laboratory For Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, China.
Ying WangKey Laboratory of Luminescence & Optical Information, School of Physical Science and Engineering, Ministry of Education, Beijing Jiaotong University, Beijing, China.
Zhiyong ZhangKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.ORCID https://orcid.org/0000-0003-1622-3447

Funding

National Science Foundation of China 62471028National Science Foundation of China 62475084National Science Foundation of China U21A6004
6 · The paper itself

Abstract

Sensitive photodetection covering UV, visible, and short-wave infrared (SWIR) lights will greatly promote applications in all-weather surveillance, remote sensing, and non-destructive inspection, but remains challenging in terms of bandwidth or dark noise based on either conventional semiconductors or emerging low-dimensional materials. Here, we take full advantage of the excellent designability and compatibility of the heterojunction-gated field-effect transistor (HGFET) phototransistor, and extend the SWIR detection upper limit from 1400 to 1700 nm through optimizing the lead sulfide (PbS) colloidal quantum dots (CQDs) based diode on the gate. Specifically, the mean diameter of CQDs is increased from 3.8 to 6.0 nm to enable efficient long-wavelength (1700 nm) absorption, and a hybrid ligand passivation strategy is used to significantly suppress defect states on the nonpolar (100) facets, thereby enhancing heterojunction photovoltage. The resulting HGFETs exhibit a broadband radiation detection from 350 to 1700 nm with a room-temperature detectivity of up to 5.7 × 10

Indexed as

carbon nanotubefield‐effect transistorphototransistorsemiconductor quantum dotsshort‐wave infrared detection

Identifiers

PMID41524205
PMCPMC13042453

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.