Evidence map›Paper›PMID 41524177›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Wide Band Gap Boron Nitride Nanodots-Incorporated Polyetherimide Dielectrics for High-Temperature Dielectric Energy Storage.

Wen-Jin Hu, Wen-Hao Huang, Nan Zhang, De-Xiang Sun, Yong Wang, Jing-Hui Yang

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Wen-Jin HuKey Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Chemistry, Southwest Jiaotong University, Chengdu, China.
Wen-Hao HuangKey Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Chemistry, Southwest Jiaotong University, Chengdu, China.
Nan ZhangKey Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Chemistry, Southwest Jiaotong University, Chengdu, China.
De-Xiang SunKey Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Chemistry, Southwest Jiaotong University, Chengdu, China.
Yong WangKey Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Chemistry, Southwest Jiaotong University, Chengdu, China.ORCID https://orcid.org/0000-0003-0655-7507
Jing-Hui YangKey Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Chemistry, Southwest Jiaotong University, Chengdu, China.

Funding

National Key Laboratory of Neutron Science and TechnologyNSAF project U2230120
6 · The paper itself

Abstract

With the ongoing trend toward miniaturization in electronic devices and the concomitant increase in power density, the operational requirements for dielectric polymer films have extended beyond conventional room-temperature conditions. In this study, low mass fraction boron nitride nanodots (BNNDs) were incorporated into polyetherimide (PEI) films. The strong π-π interaction between BNNDs and PEI enables BNNDs to effectively intercalate between adjacent PEI molecular chains, thereby effectively weakening the interchain conjugation effects within the PEI matrix, successfully suppressing energy losses at high temperatures. Consequently, the composite film achieved an exceptional breakdown strength (E

Indexed as

electrostatic energy storagehigh‐temperaturepolyetherimide dielectricsself‐healingwide band gap

Identifiers

PMID41524177
PMCPMC13042593

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.