Evidence map›Paper›PMID 41522422›Full record

ArticleCommunications materials2026

Near-zero hysteresis van der Waals MnAl

Seyed Mehdi Sattari-Esfahlan, Yury Illarionov, Fang Xu, Alexandros Provias, Saeed Mirzaei, Jan Michalička, Theresia Knobloch, Ondřej Man, Yangbo Zhou, Tibor Grasser

Abstract read
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In one paragraph

Article in Communications materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Seyed Mehdi Sattari-EsfahlanInstitute for Microelectronics (TU Wien), Vienna, Austria.ORCID 0000-0002-4596-6015
Yury IllarionovLaboratory of 2D Optoelectronics and Nanoelectronics (L2DON), State Key Laboratory of Quantum Functional Materials, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, PR China.ORCID 0000-0003-4323-1389
Fang XuSchool of Physics and Materials Science and Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, PR China.
Alexandros ProviasInstitute for Microelectronics (TU Wien), Vienna, Austria.
Saeed MirzaeiCentral European Institute of Technology, Brno University of Technology, Brno, Czech Republic.
Jan MichaličkaCentral European Institute of Technology, Brno University of Technology, Brno, Czech Republic.
Theresia KnoblochInstitute for Microelectronics (TU Wien), Vienna, Austria.ORCID 0000-0001-5156-9510
Ondřej ManCentral European Institute of Technology, Brno University of Technology, Brno, Czech Republic.ORCID 0000-0002-6032-1557
Yangbo ZhouSchool of Physics and Materials Science and Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, PR China.ORCID 0000-0003-4997-7640
Tibor GrasserInstitute for Microelectronics (TU Wien), Vienna, Austria.ORCID 0000-0001-6536-2238

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The integration of high-quality, ultrathin van der Waals (vdW) dielectrics with 2D semiconductors remains a critical bottleneck in the development of reliable, ultra-scaled field-effect transistors (FETs). Here, we report a comprehensive study of MoS

Indexed as

Electrical and electronic engineeringElectronic devices

Identifiers

PMID41522422
PMCPMC12789022

What OpenQuestion holds

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LicenceCC BY-NC-ND
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.