Evidence map›Paper›PMID 41513888›Full record

ArticleNature materials2026

Gate structuring on n-type bilayer MoS

Junyoung Kwon, Kyoung Yeon Kim, Dongwon Jang, Min Seok Yoo, Alum Jung, Dong-Su Ko, Yoonhoo Ha, Huije Ryu, Woon Ih Choi, Yeonchoo Cho and 11 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

21 authors.

Junyoung Kwon *Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0002-5351-342X
Kyoung Yeon Kim *Computational Science Engineering Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd, Giheung, Republic of Korea. k77y.kim@samsung.com.ORCID http://orcid.org/0000-0001-6977-9831
Dongwon Jang *School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA.ORCID http://orcid.org/0000-0003-4121-4067
Min Seok YooSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.
Alum JungSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.
Dong-Su KoSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0001-5901-3146
Yoonhoo HaSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0002-6634-6544
Huije RyuSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.
Woon Ih ChoiComputational Science Engineering Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd, Giheung, Republic of Korea.ORCID http://orcid.org/0000-0002-7183-3400
Yeonchoo ChoSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.
Changhyun KimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0002-0989-1482
Eunji YangSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.
Eun Kyu LeeSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0003-3056-3827
Chang-Seok LeeSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0002-6078-3874
Sang Won KimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0001-7026-8721
Uihui KwonComputational Science Engineering Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd, Giheung, Republic of Korea.ORCID http://orcid.org/0009-0000-8150-7978
Dae Sin KimComputational Science Engineering Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd, Giheung, Republic of Korea.
Sung Kyu LimDepartment of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA. limsung@usc.edu.ORCID http://orcid.org/0000-0002-2267-5282
Kyung-Eun ByunSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea. ke14.byun@samsung.com.ORCID http://orcid.org/0009-0003-8808-3698
Minsu SeolSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea. minsu.seol@samsung.com.ORCID http://orcid.org/0000-0002-8920-6181
Jeehwan KimSamsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea. jeehwan@mit.edu.ORCID http://orcid.org/0000-0002-1547-0967

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The foundry industry and academia are confronting the limits of Moore's Law scaling for logic transistors. Silicon field‑effect transistors (FETs) now rely on gate‑all‑around structures and ultrathin channels, even at the cost of decreased carrier mobility and complex fabrication processes. Two‑dimensional (2D) semiconductors offer a promising alternative because they retain their crystalline quality at atomic thicknesses. Nonetheless, whether they truly exhibit higher performance than silicon remains questionable. Here, by implementing a dual‑gate structure on bilayer MoS

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.