ArticleScientific reports2026
High-frequency characteristics analysis and optimization of coaxial-like TGVs.
Article in Scientific reports, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
1 citing paper in PubMed.
- A Review of Non-Laser and Laser Machining for Through-Glass via Fabrication.Micromachines · 2026Review
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Authors and funding
6 authors.
Funding
Abstract
The Coaxial-Like through-glass vias (TGVs) are frequently used vertical interconnect transmission structures in radio frequency (RF) three-dimensional(3D) integrated circuits (ICs). This paper addresses the TGV’s structure in high-density 3D packaging by proposing a multi-parameter co-optimization methodology that integrates electromagnetic modeling, response surface methodology (RSM), and genetic algorithm (GA), significantly enhancing its high-frequency transmission performance. Innovatively, a 3D full-wave electromagnetic simulation model of the coaxial-like TGV is established to systematically analyze the influence of via pitch p, via radius r, and number of ground vias n on the insertion loss S21. An analytical model for RLGC parasitic parameters based on electromagnetic theory is derived. A second-order response surface model correlating S21 with key structural parameters is constructed via Box-Behnken experimental design, and globally optimized using a genetic algorithm, resulting in an optimized parameter set (p = 82.05 μm, r = 10.44 μm, n = 10) for S21 at 100 GHz. Simulation results verify that the optimized S21 improves by 0.0052 dB compared to the baseline model, with a relative enhancement of 21.94%. This study not only provides a theoretical foundation and optimization framework for high-performance TGV design, but also offers an effective solution for low-loss interconnects in 3D integrated RF devices.
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