ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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7 authors.
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Abstract
Van der Waals (vdW) layered materials, distinguished by weak interlayer interactions and diverse electronic properties, have ignited widespread research in materials science, physics, and device engineering. Interfacial dislocations, such as stacking faults (SF) and rotational misorientations (RM), are typically unavoidable and play a key role in shaping their interlayer transport properties. However, the absence of techniques to decouple their individual contributions has hindered a quantitative understanding of how stacking states affect interlayer electrical transport, even in well-studied materials like graphite. In this work, we measure the intrinsic c-axis resistivity of AB-stacked epitaxial single-crystal graphite (5.7 × 10
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