ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Displacive In-Plane Ferroelectricity with Domain-Specific Curie Temperature in Van der Waals Semiconductors.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Van der Waals bilayers assembled by mechanical stacking of 2D layers have been shown to realize symmetry-breaking mechanisms, such as sliding- or moiré ferroelectricity, which are without equivalent in 3D ferroelectrics. Here, we discuss emergent, highly unconventional behavior in thicker semiconducting few-layer SnS(e) van der Waals ferroelectrics crystallizing in a distorted polar structure, obtained by bottom-up synthesis. Electron diffraction at variable temperature demonstrates a gradual displacive transformation between the polar low-temperature and symmetric high-temperature phase, with significant variability in both the lattice constants and the Curie temperature (T
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