ArticleScience advances2026
Electronic trap detection with carrier-resolved photo-Hall effect.
Article in Science advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
2 citing papers in PubMed.
- A Low-Complexity Hall-Based Measurement System Implementing a Dark/Illuminated Differential Estimator for Majority-Carrier Photoconductive Screening in DopedMaterials (Basel, Switzerland) · 2026Article
- Deriving mobility-lifetime products in halide perovskite films from spectrally and time-resolved photoluminescence.Science advances · 2025Article
Corrections and comments
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Authors and funding
14 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Electronic trap states critically affect the performance of semiconductor devices such as transistors, memory devices, and solar cells. Yet, conventional trap measurement techniques often require junction fabrication, which can introduce or alter traps. We present a unique photo-Hall-based method to characterize trap density and energy levels while concurrently extracting charge carrier properties. By analyzing photo-Hall conductivity versus electrical conductivity under varying light intensities and temperatures, we uncover an astonishingly simple hyperbola relationship that reveals detailed charge transport and trap occupation and applied it in silicon and halide perovskite films. This technique substantially expands Hall effect-based measurements by integrating electric, magnetic, photon, and phonon excitations into a single framework and enables unparalleled extraction of charge carrier and trap properties, offering a powerful tool for semiconductor characterization and device optimization.
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Registered trials
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