ArticleACS applied electronic materials2025
Metal-Assisted Chemical Etching of p‑type Si Nanopillars with Doping Level of 10
Article in ACS applied electronic materials, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Silicon nanopillars (SiNPs) are quasi-1D Si nanostructures extending normally to the substrate. As Si nanowires, SiNPs display large surface-to-volume ratios and a remarkable reduction of their thermal conductivity by almost a factor one-hundred compared to bulk Si. SiNPs have found applications in energy-related fields, including thermoelectrics and photovoltaics, and in chemical sensing and biosensing. Among the available preparation techniques, Metal-Assisted Chemical Etching (MACE) has been extensively used to prepare high density SiNP forests, as the method is facile and scalable. However, while MACE lets easily obtain low-to-medium doped SiNPs,
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