ArticleMicromachines2025
AI-Assisted Composite Etch Model for MPT.
Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
1 citing paper in PubMed.
- High-Precision Polishing of Fused Silica Microfluidic Chips via COMicromachines · 2026Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
For advanced semiconductor nodes, the demand for high-precision patterning of complex foundry circuits drives the widespread use of Lithography-Etch-Lithography-Etch (LELE)-a key Multiple Patterning Technology (MPT)-in Deep Ultraviolet (DUV) processes. However, the interaction between LELE's two Lithography-Etch (LE) cycles makes it very challenging to build a model for etching contour simulation and hotspot detection. This study presents an Artificial Intelligence (AI)-assisted composite etch model to capture inter-LE interactions, which directly outputs the final post-LELE etch contour, enabling Etch Rule Check (ERC)-based simulation detection of After Etch Inspection (AEI) hotspots. In addition, the etch model proposed in this study can also predict the etch bias of different types of pattern (especially complex two-dimensional (2D) patterns), thereby enabling auto retargeting for After Develop Inspection (ADI) target generation. In the future, the framework of this composite model can be adapted to the Self-Aligned Reverse Patterning (SARP) + Cut process to address more complex MPT challenges.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.