An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model.

Yuchen Miao, Qingyu Yuan, Chuangye Wang, Jiali Cheng

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Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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4 authors.

Yuchen MiaoSchool of Electronic Engineering, Jiangsu Ocean University, Lianyungang 222005, China.ORCID 0009-0004-7700-7961

Qingyu YuanZhejiang Provincial Key Laboratory of Spatial Information Perception and Transmission, Institute of Spatial Information, Hangzhou Dianzi University, Hangzhou 310018, China.

Chuangye WangSchool of Electronic Engineering, Jiangsu Ocean University, Lianyungang 222005, China.

Jiali ChengSchool of Electronic Engineering, Jiangsu Ocean University, Lianyungang 222005, China.ORCID 0000-0002-0349-534X

Funding

the Open Research Program of Zhejiang Key Laboratory of Information and Energy Integrated Microsystem 2024ZY01014

6 · The paper itself

Abstract

To accurately model the nonlinear characteristics of the intrinsic capacitance of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs), this paper proposes an improved nonlinear capacitance model based on the traditional Angelov model. The experiments employed GaN HEMTs fabricated by United Monolithic Semiconductors (UMS) using the GH15-10 process. These devices feature a uniform gate length of 150 nm, with gate widths designed as 2 × 10 μm, 4 × 20 μm, 6 × 30 μm, and 8 × 40 μm, respectively (gate width is calculated as "number of gate fingers × unit gate width"). In this study, two types of devices with gate widths of 2 × 10 μm and 4 × 20 μm were selected to extract intrinsic capacitance parameters, which were then substituted into the traditional Angelov model and the proposed improved model, respectively. By comparing the coefficient of determination (R

Indexed as

Angelov modintrinsic capacitancenonlinear capacitanceparameter extractionsmall-signal equivalent circuit

Identifiers

PMID41470484

DOI10.3390/mi16121318

PMCPMC12734474

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