ArticleMaterials (Basel, Switzerland)2025
Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO
Alfredo Morales-Sánchez, Karla E González-Flores, Jesús M Germán-Martínez, Braulio Palacios-Márquez, Juan F Ramírez-Rios, Javier Flores-Méndez, Alfredo Benítez-Lara, Juan R Ramos-Serrano, Luis Hernández-Martínez, Mario Moreno-Moreno
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In one paragraphArticle in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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5 · Who and what moneyAuthors and funding
10 authors.
Alfredo Morales-SánchezElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.ORCID 0000-0003-3656-2497 Karla E González-FloresElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.
Jesús M Germán-MartínezElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.ORCID 0000-0002-7994-7701 Braulio Palacios-MárquezElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.ORCID 0000-0002-4876-6246 Juan F Ramírez-RiosElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.
Javier Flores-MéndezÁrea de Ingeniería, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, Blvd. Valsequillo y Esquina Av. San Claudio s/n, Col. San Manuel, Puebla 72570, Mexico.ORCID 0000-0002-8815-7015 Alfredo Benítez-LaraElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.ORCID 0000-0002-7206-2767 Juan R Ramos-SerranoElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.ORCID 0000-0003-2591-2287 Luis Hernández-MartínezElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.ORCID 0000-0001-7178-7929 Mario Moreno-MorenoElectronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.ORCID 0000-0001-5264-8296 Funding
Secretaría de Ciencia Tecnología e Innovación CB A1-S-8205
6 · The paper itselfAbstract
This work focuses on developing resistive switching (RS) devices using thermally annealed (TA) SiO
Indexed as
resistive switching memoriessilicon nanocrystalsSiO2/Si multilayers
Identifiers
PMID41470311
PMCPMC12734878
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