Evidence map›Paper›PMID 41469405›Full record

ArticleNature communications2025

Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet.

Yaqin Guo, Aitian Chen, Zhaozhuo Zeng, Tai An, Qirui Cui, Yonglong Ga, Dongxing Zheng, Xiao Deng, Xu Zhang, Meng Tang and 15 more

Abstract read
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

25 authors.

Yaqin Guo *Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Aitian Chen *Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia. aitian.chen@uestc.edu.cn.ORCID http://orcid.org/0000-0003-3535-9470
Zhaozhuo Zeng *State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, China.ORCID http://orcid.org/0000-0002-1955-3516
Tai AnSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Qirui CuiDepartment of Applied Physics, School of Engineering Sciences, KTH Royal Institute of Technology, AlbaNova University Center, Stockholm, Sweden.
Yonglong GaSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Dongxing ZhengPhysical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.ORCID http://orcid.org/0000-0001-8030-0553
Xiao DengChina Spallation Neutron Source Science Center, Dongguan, China.
Xu ZhangSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.ORCID http://orcid.org/0000-0002-3991-5748
Meng TangPhysical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.
Zengtai ZhuSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Chuangwen WuSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Jing ZhangSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Yibo FanSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Zhe WangSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Wenjie SongSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Peng YanState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, China.ORCID http://orcid.org/0000-0001-6369-2882
Tao ZhuSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.ORCID http://orcid.org/0000-0001-7672-0192
Shouguo WangAnhui Provincial Key Laboratory of Magnetic Functional Materials and Device, Anhui University, Hefei, China.ORCID http://orcid.org/0000-0002-4488-2645
Xiufeng HanSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.ORCID http://orcid.org/0000-0001-8053-793X
Jinkui ZhaoSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Kang L WangDepartment of Electrical and Computer Engineering, University of California, Los Angeles, CA, USA.ORCID http://orcid.org/0000-0002-9363-1279
Guoqiang YuSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.ORCID http://orcid.org/0000-0002-7439-6920
Xixiang ZhangPhysical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia. xixiang.zhang@kaust.edu.sa.ORCID http://orcid.org/0000-0002-3478-6414
Hao WuSongshan Lake Materials Laboratory, Dongguan, Guangdong, China. wuhao1@sslab.org.cn.ORCID http://orcid.org/0000-0001-8608-3035

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Magnetic random-access memory (MRAM) provides a promising candidate for the next-generation memory technology with high-energy efficiency and fast operation speed. Spin splitting band structure in nonrelativistic collinear antiferromagnet with de-coupled crystal and spin symmetry provides a unique way for the flexible and efficient control of the polarization and flow directions of the spin current. Here, by integrating the potential altermagnetic (101)-RuO

Identifiers

PMID41469405
PMCPMC12868794

What OpenQuestion holds

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.