ArticleSmall (Weinheim an der Bergstrasse, Germany)2026
160 GHz Schottky Diodes from Solution-Processed IGZO.
Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed.
- 160 GHz Schottky Diodes from Solution-Processed IGZO.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
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18 authors.
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Abstract
Traditional radio frequency (RF) electronics rely on discrete devices, such as diodes, transistors, capacitors, and antennas capable of operating in the GHz frequency domain. Unfortunately, integrating these components to realize large-area RF electronics presents formidable challenges. Herein, we demonstrate wafer-scale, solution-processed indium-gallium-zinc-oxide (IGZO) Schottky diodes with a cut-off frequency exceeding 160 GHz. The diodes feature planar asymmetric self-aligned nanogap electrodes patterned via adhesion lithography (a-Lith) and a flash lamp annealed solution-processed IGZO as the semiconducting layer. An enabling feature of the devices is the Ohmic contact facilitated by an ultra-thin (10 nm) ZnO layer deposited atop the aluminum electrode without increasing the manufacturing complexity. The ZnO interlayer shifts the work function of the aluminum electrode closer to the conduction band of IGZO, reducing the injection barrier and improving electron injection. The ensuing diodes show reduced turn-on voltage (≈0.08 V), higher on-current, high rectification ratio (≈10
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