ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Three-Dimensional Heterogeneous Bonding for High-Density and Low-Noise TMR Sensing Arrays.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Not yet cited in PubMed.
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Corrections and comments
- Erratum issued
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4 authors.
Funding
Abstract
Tunneling magnetoresistance (TMR) devices are crucial for high-density low-power magnetic sensing owing to the increase in data-intensive applications. This study presents a three-dimensional heterogeneous integration bonding technique for TMR sensors. The number of serially connected magnetic tunnel junctions is doubled without enlarging the chip area by vertically bonding two TMR film stacks, and the low-frequency 1/f noise is effectively suppressed. The sputtering parameters of the Cr/Au bonding layer, argon-ion activation conditions, and bonding pressure are optimized to achieve a void ratio of only 0.73%. Double-layer TMR devices are fabricated via backside silicon removal, photolithography, and ion-beam etching. A 45° etching angle mitigates sidewall redeposition, increases the magnetoresistance ratio from 149% to 172%, and decreases the magnetic noise to 0.97 nT·Hz
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