Evidence map›Paper›PMID 41445835›Full record

ArticleACS applied nano materials2025

Spontaneous Room-Temperature Solid-State Reaction at the MoS

Bazlul Karim, Luka Pirker, Jan Plšek, Václav Valeš, Martin Vondráček, Michaela Hanušová, Viktor Zólyomi, Michele Gastaldo, Abhilash Bajpai, Jakob Ziewer and 5 more

Abstract read
In one paragraph

Article in ACS applied nano materials, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Bazlul KarimJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.
Luka PirkerJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.
Jan PlšekJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.
Václav ValešInstitute of Physics, Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic.
Martin VondráčekInstitute of Physics, Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic.
Michaela HanušováJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.
Viktor ZólyomiHartree Centre, STFC Daresbury Laboratory, Daresbury WA4 4AD, United Kingdom.
Michele GastaldoJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.ORCID https://orcid.org/0000-0002-8900-8257
Abhilash BajpaiJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.
Jakob ZiewerCentre for Quantum Materials and Technologies, School of Mathematics and Physics, Queen's University Belfast, University Road, Belfast BT7 1NN, United Kingdom.
Fumin HuangCentre for Quantum Materials and Technologies, School of Mathematics and Physics, Queen's University Belfast, University Road, Belfast BT7 1NN, United Kingdom.ORCID https://orcid.org/0000-0001-6489-9818
Jan HonolkaInstitute of Physics, Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic.
Otakar FrankJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.ORCID https://orcid.org/0000-0002-9661-6250
Matěj VelickýJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.ORCID https://orcid.org/0000-0003-4230-3811
Martin KalbáčJ. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.ORCID https://orcid.org/0000-0001-9574-4368

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

High-quality interfaces with metals are essential for exploiting two-dimensional materials in nanoscale solid-state devices. Conventional strategies rely on depositing metals with a suitable work function at low kinetic energies to minimize damage. Direct exfoliation of layered materials onto clean metal surfaces under ultrahigh vacuum offers a promising alternative, producing pristine, oxide-free interfaces while avoiding the disorder induced by high-energy metal deposition. TMDCs possess unique properties, including a direct band gap, high carrier mobility, and strong spin-orbit coupling, which makes them highly promising for high-performance electronic and optoelectronic devices such as transistors, photodetectors, and solar cells, as well as for emerging quantum technologies. While the metal-assisted exfoliation is well established for gold and other noble metals, its applicability to more reactive metals remains unclear. To address this question, we exfoliate large-area MoS

Indexed as

interfacial reactionMoS2Raman spectroscopytitaniumUHV exfoliationXPS

Identifiers

PMID41445835
PMCPMC12723649

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.