ArticleScientific reports2025
Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range.
Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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1 citing paper in PubMed.
- Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor.Scientific reports · 2026Article
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4 authors.
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Abstract
A multi-channel Gallium Nitride (GaN) based Gate-All-Around (GAA) Nanosheet Field Effect Transistor (NS FET) having 2 nm gate underlap wrapping of high-k dielectric spacer are designed, explored and analysed for inclusion in future wireless application systems. The integration of GaN as the channel material provides superior electron mobility and high breakdown voltage, making it extremely suitable for high-frequency applications. The inclusion of the gate underlap region effectively reduces parasitic capacitance while mitigate short channel effects due to its high-k wrapping. High dielectric gate stack is employed to enhance gate channel coupling and reduce leakage currents. Calibration is done utilizing a fabricated GaN FET and further validated by analytical threshold voltage modelling. Further, DC characterization reveals a remarkably low off-current (I
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