Evidence map›Paper›PMID 41438946›Full record

ArticleResearch (Washington, D.C.)2025

Native GaN/GaO

Jinhua Liang, Chi Liu, Yuning Wei, Shun Feng, Yun Sun, Yutaka Ohno, Hui-Ming Cheng, Dong-Ming Sun

Abstract read
In one paragraph

Article in Research (Washington, D.C.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Jinhua LiangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
Chi LiuShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.ORCID https://orcid.org/0000-0002-8778-3831
Yuning WeiShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
Shun FengShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
Yun SunShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
Yutaka OhnoDepartment of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan.
Hui-Ming ChengShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.ORCID https://orcid.org/https://orcid.org/0000-0002-5387
Dong-Ming SunShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.ORCID https://orcid.org/https://orcid.org/0000-0003-1552

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The drive for complementary transistors with ultra-steep subthreshold swing (SS) and minimal power consumption has intensified interest in integrating low-dimensional semiconductors with wide-bandgap materials, as silicon scaling approaches its physical limits in the post-Moore era. A central bottleneck, however, lies in dielectric/semiconductor interface engineering: existing strategies based on van der Waals transfer or nonnative dielectric deposition compromise interface quality, wafer-scale uniformity, and process compatibility, preventing practical large-scale integration. Here, we demonstrate a previously unexplored in situ oxidation strategy that directly forms a high-κ gallium oxide (GaO

Identifiers

PMID41438946
PMCPMC12719557

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.