512 Gbps/λ dual-polarization thin-film lithium niobate modulators based on an electro-optic equalizer.

Jianmin Zhang, Jian Shen, Shuxiao Wang, Zhuoyun Li, Wencheng Yue, Xin Ou, Yan Cai

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Article in Nanophotonics (Berlin, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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7 authors.

Jianmin ZhangState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.ORCID https://orcid.org/0009-0002-4502-4391

Jian ShenState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Shuxiao WangState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Zhuoyun LiState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Wencheng YueState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Xin OuState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Yan CaiState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Driven by the development of AI applications, optical communication systems experience an exponential surge in the demand for high data rates. Thin-film lithium niobate (TFLN) electro-optic (EO) modulators have been extensively studied and show potential for application in next-generation optical communication systems. In this paper, we present a dual-polarization (DP) TFLN EO modulator integrated based on an EO equalizer, fabricated on the lithium-niobate-on-insulator (LNOI) platform. The device consists of an 11-mm-long forward modulation section and a 4.5-mm-long reverse modulation section. It achieves a half-wave voltage (V

Indexed as

electro-optic modulatorMach-Zehnder interferometerpolarization splitter-rotatorthin film lithium niobatetraveling-wave electrode

Identifiers

PMID41425460

DOI10.1515/nanoph-2025-0472

PMCPMC12714062

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