Evidence map›Paper›PMID 41419719›Full record

ArticleNano-micro letters2025

Gas-Phase Construction of Compact Capping Layers for High-Performance Halide Perovskite X-Ray Detectors.

Bin Zhang, Chuanyun Hao, Shoufeng Zhang, Bin Xue, Xiangfan Xie, Shengqiao Zeng, Bin Yang, Fang Xu, Hui Li, Xin'an Zhang and 10 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nano-micro letters, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

20 authors.

Bin Zhang *Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Chuanyun Hao *Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Shoufeng Zhang *School of Electrical Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, People's Republic of China.
Bin XueShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Xiangfan XieShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Shengqiao ZengShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Bin YangShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Fang XuShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Hui LiShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Xin'an ZhangShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Zhang QuShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.
Kai-Hang YeInstitute for Sustainable Transformation School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006, People's Republic of China.
Guangda NiuResearch Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen, 518052, People's Republic of China.
Wallace C H ChoyDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Pokfulam, Hong Kong SAR, People's Republic of China.
Kezhou FanDepartment of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, People's Republic of China.
Kam Sing WongDepartment of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, People's Republic of China.
Lei YanEngineering and Research Center for Integrated New Energy Photovoltaics & Energy Storage Systems of Hunan Province and School of Electrical Engineering, University of South China, Hengyang, 421001, People's Republic of China.
Xingzhu WangEngineering and Research Center for Integrated New Energy Photovoltaics & Energy Storage Systems of Hunan Province and School of Electrical Engineering, University of South China, Hengyang, 421001, People's Republic of China. 2022000041@usc.edu.cn.
Shuang XiaoShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China. xiaoshuang@sztu.edu.cn.
Cangtao ZhouShenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, People's Republic of China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Halide perovskites have emerged as promising materials for X-ray detection with exceptional properties and reasonable costs. Among them, heterostructures between 3D perovskites and low-dimensional perovskites attract intensive studies of their advantages due to low-level ion migration and decent stability. However, there is still a lack of methods to precisely construct heterostructures and a fundamental understanding of their structure-dependent optoelectronic properties. Herein, a gas-phase method was developed to grow 2D perovskites directly on 3D perovskites with nanoscale accuracy. In addition, the larger steric hindrance of organic layers of 2D perovskites was proved to enable slower ion migration, which resulted in reduced trap states and better stability. Based on MAPbBr

Indexed as

Halide perovskiteHeterostructureInterfaceIon migrationX-ray detection

Identifiers

PMID41419719
PMCPMC12717332

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.