Evidence map›Paper›PMID 41419480›Full record

ArticleNature communications2025

Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr.

Guorui Zhao, Yibin Zhao, Yu Zhang, Kunlin Yang, Zejing Guo, Jiaqi Liu, Tuoyu Zhao, Kun Yan, Xiaobin Chen, Qi Li and 8 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Multi-State Memory in 2D Magnets via Thickness-Engineered Growth.Advanced materials (Deerfield Beach, Fla.) · 2026
    Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Guorui ZhaoState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.ORCID http://orcid.org/0009-0004-3497-2307
Yibin ZhaoState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
Yu ZhangCenter for Advanced Quantum Studies and School of Physics and Astronomy, Beijing Normal University, Beijing, China.
Kunlin YangState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
Zejing GuoState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
Jiaqi LiuState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
Tuoyu ZhaoState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
Kun YanSchool of Science, State Key Laboratory on Tunable Laser Technology and Ministry of Industry & Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, China.
Xiaobin ChenSchool of Science, State Key Laboratory on Tunable Laser Technology and Ministry of Industry & Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, China.ORCID http://orcid.org/0000-0001-5761-5020
Qi LiKey Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, China.
Yingchun ChengState Key Lab of Metastable Materials Science & Technology and Key Laboratory for Microstructure Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, China.ORCID http://orcid.org/0000-0002-8495-9184
Cheng ZhangState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0002-9882-1952
Zhe WangMOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an, China.ORCID http://orcid.org/0000-0001-5664-2932
Yi LiuInstitute for Quantum Science and Technology, Department of Physics, Shanghai University, Shanghai, China.ORCID http://orcid.org/0000-0001-8677-5584
Jianting YeDevice Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands.ORCID http://orcid.org/0000-0002-3667-3069
Jia-Wei MeiState Key Laboratory of Quantum Functional Materials, Department of Physics, and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology, Shenzhen, China. meijw@sustech.edu.cn.ORCID http://orcid.org/0000-0003-4933-4880
Zhe YuanState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China. yuanz@fudan.edu.cn.ORCID http://orcid.org/0000-0002-1898-7857
Wu ShiState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China. shiwu@fudan.edu.cn.ORCID http://orcid.org/0000-0002-6458-4776

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Van der Waals antiferromagnetic semiconductors are promising platforms for energy-efficient two-dimensional spintronics. However, their intrinsic spin degeneracy and the difficulty of achieving electrical spin control pose major challenges for practical device implementation. Here, we present a distinct spintronic platform based on an antiferromagnetic semiconductor CrSBr, in which carrier doping induced by gate-controlled intercalation drives a reversible, zero-field antiferromagnetic to ferromagnetic phase transition, enabling direct and full electrical control of both magnetic order and spin polarization. Exploiting this transition, we engineer CrSBr/graphene heterostructures that leverage interfacial charge transfer to spatially pattern magnetic phases, resulting in lateral spin valves with gate-controlled spin polarization reversal, all without ferromagnetic contacts. Crucially, this mechanism also enables electrical switching of magnetic order via spin-transfer torque at ultralow current densities (<10

Identifiers

PMID41419480
PMCPMC12827471

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.