Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes.

Xia Gan, Liping Zhu, Jiyuan Han, Xinrong Zuo, Changlin Zheng, Wenwu Li, Junhao Chu, Zhenghua An

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Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

8 authors.

Xia GanState Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, China.ORCID http://orcid.org/0009-0005-2811-205X

Liping ZhuState Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, China. zhuliping@fudan.edu.cn.

Jiyuan HanState Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, China.

Xinrong ZuoState Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, China.

Changlin ZhengState Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, China. zcl@fudan.edu.cn.ORCID http://orcid.org/0000-0002-3030-9557

Wenwu LiShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai, China. liwenwu@fudan.edu.cn.ORCID http://orcid.org/0000-0002-9307-1566

Junhao ChuShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai, China.

Zhenghua AnState Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, China. anzhenghua@fudan.edu.cn.ORCID http://orcid.org/0000-0001-8664-6184

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Hafnium zirconium oxide with antiferroelectric polarizations holds great promise for emerging applications such as neuromorphic computing, energy-efficient storage, and nonvolatile memory, owing to its tunable phase transitions, fast switching speed, improved endurance, and excellent compatibility with silicon-based processes. In practical memory applications, however, the moderate residual polarizations of antiferroelectric hafnium zirconium oxide films pose greater challenges for nondestructive readout than their ferroelectric counterparts, particularly when relying solely on electrical pulses applied via metal electrodes. Here, we introduce graphite nanosheets as photoactive top electrodes for Hf

Identifiers

PMID41419477

DOI10.1038/s41467-025-67575-x

PMCPMC12827957

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