ArticleSmall (Weinheim an der Bergstrasse, Germany)2026
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation.
Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
1 citing paper in PubMed.
- Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
12 authors.
Funding
Abstract
Bandgap engineering in semiconductors is required for the development of photonic and optoelectronic devices with optimized absorption and emission energies. This is usually achieved by changing the chemical or structural composition during growth or by dynamically applying strain. Here, the bandgap in GaAsN nanowires grown on Si is increased post-growth by up to 460 meV in a reversible, tunable, and non-destructive manner through H implantation. Such a bandgap tunability is unattained in epilayers and enabled by relaxed strain requirements in nanowire heterostructures, which enables N concentrations of up to 4.2% in core-shell GaAs/GaAsN/GaAs nanowires resulting in a GaAsN bandgap as low as 0.97 eV. Using
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.