Evidence map›Paper›PMID 41398071›Full record

ArticleNature nanotechnology2026

Sb-contacted MoS

Guoyun Gao, Bo Wen, Ni Yang, Zhiyuan Du, Mingrui Jiang, Ruibin Mao, Rui Qiu, Yingnan Cao, Hongxia Xue, Deng Zou and 10 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature nanotechnology, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Two-Dimensional Flash Memory: Materials, Interfaces, and Storage-Computing Convergence.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

20 authors.

Guoyun Gao *Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0000-0003-2572-1413
Bo Wen *Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0000-0002-6106-9509
Ni YangDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
Zhiyuan DuDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.
Mingrui JiangDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0009-0000-2364-3904
Ruibin MaoDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0000-0001-6085-0486
Rui QiuDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0000-0002-9918-8271
Yingnan CaoDepartment of Chemistry, The University of Hong Kong, Hong Kong, China.
Hongxia XueDepartment of Physics, The University of Hong Kong, Hong Kong, China.
Deng ZouDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
Pak San YipDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0009-0005-1484-8840
Qihan LiuState Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Yi WanDepartment of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0000-0002-6202-4193
Dong-Keun KiDepartment of Physics, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0000-0002-4638-2038
Jinyao TangDepartment of Chemistry, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0000-0002-0051-148X
Paddy K L ChanDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
Hao JiangState Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Han WangDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.ORCID http://orcid.org/0000-0001-5121-3362
Lain-Jong LiDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong, China. lance.li@nus.edu.sg.ORCID http://orcid.org/0000-0002-4059-7783
Can LiDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China. canl@hku.hk.ORCID http://orcid.org/0000-0003-3795-2008

Funding

National Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund (NSFC-Yunnan Joint Fund) 62122005Research Grants Council, University Grants Committee (RGC, UGC) AoE/P-701/20Research Grants Council, University Grants Committee (RGC, UGC) T45-701/22-RResearch Grants Council, University Grants Committee (RGC, UGC) T46-705/23-R, CRS_PolyU502/22
6 · The paper itself

Abstract

The explosion of artificial intelligence and edge devices has exposed a critical bottleneck in traditional hardware: the slow data transfer between memory and processing. Content-addressable memories offer a promising solution by processing information directly within the memory, but existing implementations using static random-access memory and, more recently, those using emerging non-volatile memories are constrained by the performance of silicon transistors. Here we introduce an analogue content-addressable memory utilizing atomically thin two-dimensional MoS

Identifiers

PMID41398071

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.