Article in Small science, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registry
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what money
Authors and funding
11 authors.
Sora JangDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.ORCID https://orcid.org/0009-0002-0812-9602
Juwon HanDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.
Aram YoonDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.
Jaewon WangDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.
Hyeonwoo LeeDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.
Young Ho JinDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.
Yeoseon SimDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.
Zonghoon LeeDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.
Changwook JeongDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.ORCID https://orcid.org/0000-0003-3962-7153
Soon-Yong KwonDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.ORCID https://orcid.org/0000-0002-2432-0418
Funding
No grant is acknowledged in the PubMed record.
6 · The paper itself
Abstract
Edge contacts offer significant potential for scaling down 2D transistors due to their minimal contact resistance and reduced contact length. However, their intricate fabrication complicates reproducible large-scale production and evaluation of electrical properties, particularly for p-type channels. Here, the wafer-scale production of p-type nanosheet transistors with pure edge contacts by leveraging the alloying-mediated phase engineering of 2D MoTe
Indexed as
contact length scalingcontact resistanceedge contactselective‐area growthsemimetal electrodetransition metal dichalcogenide
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.
Wafer-Scale Fabrication of Edge-Contacted Nanosheet Transistors via Alloying-Mediated Phase Engineering. · full record | OpenQuestion