Evidence map›Paper›PMID 41374662›Full record

ArticleSensors (Basel, Switzerland)2025

High-Sensitivity Solidly Mounted Resonator Load Sensor Based on AlN/AlScN Heterostructure.

Wanqing Zuo, Xiyu Gu, Tingting Yang, Qinwen Xu, Haiyang Li, Yao Cai, Chengliang Sun

Abstract read
In one paragraph

Article in Sensors (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Wanqing ZuoDepartment of Electrical and Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong, China.
Xiyu GuHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, School of Integrated Circuits, Wuhan University, Wuhan 430072, China.
Tingting YangHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, School of Integrated Circuits, Wuhan University, Wuhan 430072, China.
Qinwen XuHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, School of Integrated Circuits, Wuhan University, Wuhan 430072, China.
Haiyang LiHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, School of Integrated Circuits, Wuhan University, Wuhan 430072, China.ORCID 0000-0003-3456-2274
Yao CaiHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, School of Integrated Circuits, Wuhan University, Wuhan 430072, China.ORCID 0000-0003-0555-5745
Chengliang SunHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, School of Integrated Circuits, Wuhan University, Wuhan 430072, China.ORCID 0000-0003-1986-2674

Funding

National Key R&D Program of China 2023YFB3211301National Natural Science Foundation of China 62431019Wuhan Science and Technology Major Project 2024051102020828
6 · The paper itself

Abstract

Bulk acoustic wave (BAW) resonators, with their exceptional high-frequency performance and excellent quality factor, have become a key driver of advances in sensing technology. This study reports the fabrication and characterization of a force sensor based on a solid mounted resonator (SMR) structure. This SMR device utilizes a high resonance frequency of 2.257 GHz as its core sensing element. The operational mechanism involves the application of an external load inducing localized downward mechanical deformation in the SMR film at the pin contact region, thereby generating significant in-plane compressive stress within the piezoelectric layer. The applied strain modifies the intrinsic elastic and piezoelectric constants of the film, thereby changing both the acoustic phase velocity and the electromechanical coupling coefficient (Kt2), which ultimately leads to a measurable shift in the resonance frequency. The experimental results reveal a deterministic and robust correlation between the resonance frequency shift and the applied load, which forms a precise function relationship enabling the device to achieve a high sensitivity of 37.79 MHz/N. This indicates that it may possess good application and development potential in various complex industrial fields.

Indexed as

AlN/AlScN composite filmload sensorpiezoelectric thin filmsolidly mounted resonator (SMR)

Identifiers

PMID41374662
PMCPMC12694189

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.