ArticleScientific reports2025
Analysis of physical mechanisms for channel-length-dependent PBTS reliability in SA TG coplanar IGZO TFTs.
Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
This study investigates the physical mechanisms for channel-length-dependent positive bias temperature stress (PBTS) reliability in self-aligned top-gate (SA TG) coplanar indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). We fabricated devices with channel lengths of 3 µm, 12 µm, and 20 µm and characterized them using high-low frequency capacitance-voltage measurements and low-frequency noise analysis. Experimental results show that the 3 µm channel length device exhibits a significantly lower subgap density of states in the IGZO channel and a reduced near-interface trap density in the gate dielectric compared to its longer-channel counterparts. These reductions are strongly correlated with the enhanced PBTS reliability of the short-channel SA TG coplanar IGZO TFTs. We propose that hydrogen diffusion from the n
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