Evidence map›Paper›PMID 41369482›Full record

ArticleNanomaterials (Basel, Switzerland)2025

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects.

Potaraju Yugender, Sneha Singh, Kuleen Kumar, Rudra Sankar Dhar, Alexey Y Seteikin, Amit Banerjee, Ilia G Samusev

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Potaraju YugenderDepartment of Electronics and Communication Engineering, National Institute of Technology Mizoram, Chaltlang, Aizawl 796012, Mizoram, India.
Sneha SinghDepartment of Electronics and Communication Engineering, National Institute of Technology Mizoram, Chaltlang, Aizawl 796012, Mizoram, India.
Kuleen KumarDepartment of Electronics and Communication Engineering, National Institute of Technology Puducherry, Thiruvettakudy, Karaikal 609609, Puducherry, India.
Rudra Sankar DharDepartment of Electronics and Communication Engineering, National Institute of Technology Mizoram, Chaltlang, Aizawl 796012, Mizoram, India.ORCID 0000-0002-6571-3808
Alexey Y SeteikinResearch and Education Center for Fundamental and Applied Photonics & Nanophotonics, Immanuel Kant Baltic Federal University, 236000 Kaliningrad, Russia.ORCID 0000-0001-9220-3320
Amit BanerjeeMicrosystem Design Integration, Laboratory of Physics Department, Bidhan Chandra College, Asansol 713303, West Bengal, India.ORCID 0000-0001-9612-4523
Ilia G SamusevResearch and Education Center for Fundamental and Applied Photonics & Nanophotonics, Immanuel Kant Baltic Federal University, 236000 Kaliningrad, Russia.ORCID 0000-0001-5026-7510

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

A Gate Stack GAA FET using SiGe with a 2 nm gate underlap encapsulating a high-k spacer has been created, explored, and evaluated for improved performance in radio frequency applications. The chip shows significant improvements in electrical and radio frequency analog performance because of the use of wrapped underlaps of high-k, which suppress parasitic capacitance and fringing field effects, to achieve a 192.52% boost in drain current and 98% reduction in I

Indexed as

GAA FETgate stacklinearity and harmonics analysisSi/SiGe channel

Identifiers

PMID41369482
PMCPMC12693591

What OpenQuestion holds

Textmetadata
LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.