Evidence map›Paper›PMID 41361026›Full record

ArticleNature nanotechnology2026

Band-hybridized selenium contact for p-type semiconductors.

Cong Wang, Jianmiao Guo, Dexing Liu, Ziyuan Lin, Shuai Guo, Songhua Cai, Jianmin Yan, Baizhe He, Zhiyong Zhang, Min Zhang and 1 more

Abstract read
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In one paragraph

Article in Nature nanotechnology, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Wafer-scale synthesis of WSeScience advances · 2026
    Article
  2. Review
  3. Article
  4. Article
  5. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Cong Wang *Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0001-7151-0436
Jianmiao Guo *Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0001-9832-4203
Dexing Liu *Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0001-5387-4981
Ziyuan LinDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
Shuai GuoDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0002-1732-2722
Songhua CaiDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0003-3839-2030
Jianmin YanDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0002-2467-630X
Baizhe HeKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
Zhiyong ZhangKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.ORCID http://orcid.org/0000-0003-1622-3447
Min ZhangSchool of Electronic and Computer Engineering, Peking University, Shenzhen, China.ORCID http://orcid.org/0000-0002-2225-8024
Yang ChaiDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China. ychai@polyu.edu.hk.ORCID http://orcid.org/0000-0002-8943-0861

Funding

Research Grants Council, University Grants Committee (RGC, UGC) 15301023
6 · The paper itself

Abstract

Semimetals can establish a low-resistance contact to semiconductors by suppressing metal-induced gap states. Although semimetals like bismuth have enabled an ultralow contact resistance for n-type two-dimensional semiconductors by mitigating metal-induced gap states, achieving a similar performance for p-type two-dimensional counterparts remains a notable hurdle. Here we introduce an ultrathin selenium interfacial layer with the highest work function among elements, effectively reducing the Schottky barrier height at the interface. Critically, the selenium layer interacts with the gold electrode, inducing band hybridization that transforms the contact interface from a semiconductor to a semimetal. This semimetallic characteristic, with its low density of states near the Fermi level, suppresses the formation of detrimental metal-induced gap states within the semiconductor. Applying this band-hybridized semimetallic contact to p-type WSe

Identifiers

PMID41361026

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.